Research Journal of Optics and Photonics

All submissions of the EM system will be redirected to Online Manuscript Submission System. Authors are requested to submit articles directly to Online Manuscript Submission System of respective journal.

Improved performance GaN on GaN based LED with novel step of roughnening on backside (N-face) of GaN substrate

Homoepitaxial growth of GaN based LEDs on bulk GaN substrate is the way forward for the ultimate LED technology [1]. At this point, such LEDs still exhibit low light extraction efficiency, which subsequently degrades the overall performance of the LEDs. To overcome this, roughening the backside (N-face) of the GaN substrate after the LED growth; e.g [2] has been widely practised in many experiments. In this work, we go into opposite direction by roughening the N-face of the GaN substrate prior to the LED growth. It was found that the peak of external quantum efficiency (EQE) and optical output power of the LED on pre-roughened GaN substrate is 21.6% at 12 mA/cm2 while the LED on post-roughened GaN substrate is 20.6% at 14 mA/cm2 . The preroughnening removed oxides and carbon impurities on the Ga-face of the substrate. Hence, the LED was grown on a clean surface (Ga-face) of GaN substrate and hence, improving its performance. This is unlikely for the LED grown on the post-roughened substrate. Furthermore, in comparison to the post-roughnening, the pre-roughening does not require the additional step for coating on the pGaN surface of LED component which is used in structure

Special Features

Full Text


Track Your Manuscript

Scheduled supplementary issues

View More »

Media Partners