Research Journal of Optics and Photonics

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E. A. Alias Author

Alireza.Heidari@calsu.us

Subjects of specialization
Sequential circuits

Affiliation
Institute of Nano Optoelectronics Research and Technology (INOR), Malaysia

Biography

Ezzah Alias received her B.Sc degree (in 2012) and MSc degree (in 2015) from Universiti Sains Malaysia (USM). She is currently pursuing her PhD study at USM. As of now, Ezzah Alias has published 10 papers and has presented her work at more than 5 conferences. For her PhD project, she is working on developing nitrides based green LED on GaN substrate through MOCVD epitaxy. 

Publications

Special Issue Article Open Access

Improved performance GaN on GaN based LED with novel step of roughnening on backside (N-face) of GaN substrate

Author(s):

E. A. Alias

Homoepitaxial growth of GaN based LEDs on bulk GaN substrate is the way forward for the ultimate LED technology [1]. At this point, such LEDs still exhibit low light extraction efficiency, which subsequently degrades the overall performance of the LEDs. To overcome this, roughening the backside (N-face) of the GaN substrate after the LED growth; e.g [2] has been widely practised in many experiments. In this work, we go into opposite direction by roughening the N-face of the GaN substrate prior to the LED growth. It was found that the peak of external quantum efficiency (EQE) and optical output power of the LED on pre-roughened GaN substrate is 21.6% at 12 mA/cm2 while the LED on post-roughened GaN substrate is 20.6% at 14 mA/cm2 . The preroughnening removed oxides and carbon impurities ... view more»

Abstract PDF

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