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Hindi Journal of Electrical Engineering and Electronic TechnologyISSN: 2325-9833
M R Tripathy Author
Subjects of specialization
Affiliation
Atlas-3D; Gate all around; High-k; Junction less; Modelling; Surrounding gate; Sub threshold slope; Short channel effects
Department of Electronics and Communication Engineering, Amity University, Noida, Uttar Pradesh, India
Biography
M R Tripathy Temperature-Dependent Sub threshold Drain Current Model for Junction less Gate all Around MOSFET with High-K Gate Stack and he had a publication on Temperature Dependent Sub threshold Drain Current Model for Junction less Gate all Around MOSFET with High-K Gate Stack
Publications
Research Article Subscription
Temperature Dependent Sub threshold Drain Current Model for Junction less Gate all Around MOSFET with High-K Gate Stack
Author(s): Suman Sharma, Rajni Shukla and M R Tripathy
A temperature dependent sub threshold drain current model for junction less (JL) Gate all around (GAA) MOSFET with high-k Gate Stack is developed in this paper. Poisson’s equation in cylindrical coordinate has been solved using Parabolic Potential Approximation (PPA). The effect of temperature variation from 300-500 K on the sub threshold performance of the JL-GAA MOSFET by varying the gate stack thickness has been obtained using the proposed model. The developed model has also been used to study the Sub threshold- Slop of JL-GAA MOSFET at high ambient temperature. Band-gapnarrowing is also included in the analytical model as the doping concentrat... view more»
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