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Hindi Journal of Electrical Engineering and Electronic TechnologyISSN: 2325-9833
Rajni Shukla Author
Subjects of specialization
Affiliation
Atlas-3D; Gate all around; High-k; Junction less; Modelling; Surrounding gate; Sub threshold slope; Short channel effects
Department of Applied Physics, Deenbandhu Chottu Ram University, Murthal, Sonepat, Haryana, India
Biography
Rajni Shukla Department of Applied Physics, Deenbandhu Chottu Ram University, Murthal, Sonepat, Haryana, India he had a publication on Temperature Dependent Sub threshold Drain Current Model for Junction less Gate all Around MOSFET with High-K Gate Stack
Publications
Research Article Subscription
Temperature Dependent Sub threshold Drain Current Model for Junction less Gate all Around MOSFET with High-K Gate Stack
Author(s): Suman Sharma, Rajni Shukla and M R Tripathy
A temperature dependent sub threshold drain current model for junction less (JL) Gate all around (GAA) MOSFET with high-k Gate Stack is developed in this paper. Poisson’s equation in cylindrical coordinate has been solved using Parabolic Potential Approximation (PPA). The effect of temperature variation from 300-500 K on the sub threshold performance of the JL-GAA MOSFET by varying the gate stack thickness has been obtained using the proposed model. The developed model has also been used to study the Sub threshold- Slop of JL-GAA MOSFET at high ambient temperature. Band-gapnarrowing is also included in the analytical model as the doping concentrat... view more»
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