Journal of Electrical Engineering and Electronic TechnologyISSN: 2325-9833

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Research Article, J Electr Eng Electron Technol Vol: 6 Issue: 4

Study of Two-Dimensional Electron Gases for GaN-Based Heterostructure

Rahman MS*, Babuya SK, Mahfuz MA, Foisal BT Siddiki and Mahmood ZH

Department of Electrical and Electronic Engineering, University of Dhaka, Curzon Hall, High Court Street, Dhaka 1000-1200, Bangladesh

*Corresponding Author : Rahman MS
Dept. of Electrical and Electronic Engineering, University of Dhaka, Curzon Hall, High Court Street, Dhaka 1000- 1200, Bangladesh
Tel: +(880)1674987189
E-mail: [email protected]

Received: July 05, 2017 Accepted: July 25, 2017 Published: August 02, 2017

Citation: Rahman MS, Babuya SK, Mahfuz MA, Siddiki FBT, Mahmood ZH (2017) Study of Two-Dimensional Electron Gases for GaN-Based Heterostructure. J Electr Eng Electron Technol 6:4. doi: 10.4172/2325-9833.1000149

Abstract

Two dimensional electron gas (2DEG) sheet carrier density is investigated for AlGaN/GaN, AlN/GaN and InGaN/GaN heterostructures using a self-consistent Schrödinger-Poisson equation simulator. The simulation also takes into account the underlying physics behind the characteristics of the 2DEG density nature. The dependence of 2DEG density on alloy composition, thickness of the channel layer and the change of gate voltage are investigated in the process. This simulation displays the comparison of 2DEG sheet carrier density among different heterostructures. The maximum 2DEG sheet carrier density obtained for AlGaN/GaN is 1.76×1013 cm-2, for AlN/GaN is 2.16×1013 cm-2 and for InGaN/GaN is 1.82×1013 cm-2 without any bias voltage.

Keywords: Nitrides; High-electron-mobility transistors; 2 degree electron gas

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