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Hindi Journal of Nanomaterials & Molecular NanotechnologyISSN: 2324-8777
Upadhyay RB Author
Subjects of specialization
Affiliation
Nanoscience, Nanotubes, Nanomaterials, Nanotechnology, Nanoparticles.
Microelectronics Group, Space Applications Centre, ISRO, Ahmedabad, India
Biography
Modeling of electrically tunable metamaterial embedded intersubband transitions in GaN HEMT for terahertz applications is one of the main research works of R B Upadhyay. R B Upadhyay is from Microelectronics Group, Space Applications Centre, ISRO, Ahmedabad, India.
Publications
Research Article Subscription
Optimization of Ohmic Contact Fabrication for Al0.3Ga0.7N/AlN/GaN HEMTs on 6H-SiC Using Recess Etching and Surface Plasma Treatment Processes
Author(s): Rastogi G, Kaneriya RK, Sinha S and Upadhyay RB
Ohmic contacts to AlGaN/AlN/GaN heterostructures with low contact resistance and smooth surface morphology play a vital role in the development of high power, high frequency GaN transistors. In the present work, two different Ohmic contact fabrication techniques, recess etching and surface plasma treatment, are optimized in order to obtain good Ohmic contact performance on undoped AlGaN/AlN/ GaN heterostructure on 6H-SiC substrate.
For Ohmic contact fabrication, Ti/Al/Ni/Au metallization scheme is studied under optimized Rapid Thermal Annealing (RTA) temperature and time. Three samples are prepared with different recess based process flow and surface plasma treatment. Standard Transmission Line Model (TLM) is used for computation of contact resistance, sheet resistance and specif... view more»
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