Journal of Nuclear Energy Science & Power Generation TechnologyISSN: 2325-9809

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The Dependence of Charge Carriers on the Methods of Thermal Processing of Residence Time on Silicon, Legalized with Copper and Iridium

In this work, we investigated the dependence of the concentration of centers of energy levels on the lifetime of charge carriers in silicon samples doped with copper and iridium, and the electro physical, photoelectric and recombination properties of the sample under the influence of thermal and radiation exposure.

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