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Hindi Journal of Nanomaterials & Molecular NanotechnologyISSN: 2324-8777
Shi-Yun Z Author
Subjects of specialization
Affiliation
Nanoscience, Nanotubes, Nanomaterials, Nanotechnology, Nanoparticles.
Avionics and Information Network Engineering Center, Anshun University, Anshun, China
Biography
Photoelectric Properties of La, Ce, Th Doped 2D SiC: A First Principle Study is one of the research works of Shi-Yun. Shi-Yun is from Avionics and Information Network Engineering Center, Anshun University, Anshun, China
Publications
Research Article Open Access
Photoelectric Properties of La, Ce, Th Doped 2D SiC: A First Principle Study
Author(s): Wan-Jun Y, Xin-Mao Q, Chun-Hong Z, Zhong-Zheng Z and Shi-Yun Z
The geometrical structure, energy band structure, density of states and optical properties of La, Ce and Th doped two-dimensional (2D) SiC are investigated by using the first-principle method. Geometrical structure results show that all of the doping atoms cause obvious distortion of the crystal lattice near the doping atoms, and the degree of distortion is related to the covalent radius of different doping atoms. The pure 2D SiC is a direct-gap semiconductor with a gap of 2.60 eV. Near the Fermi energy, the density of states is mainly composed of C-2p and Si-3p. When doping with La, Ce and Th, the band gap of 2D SiC decreased and all of them turn into quasi-direct band-gap semiconductors. The valence band of La and Th doped 2D SiC are mainly composed of C-2... view more»
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