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Hysteresis effect on I (V) measurements in (SWCNT) base

Journal of Nanomaterials & Molecular Nanotechnology.ISSN: 2324-8777

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Hysteresis effect on I (V) measurements in (SWCNT) based sensors with different electrodes


Yasmin Bergaoui, M Troudi, P Bondavalli and N Sghaier

Université de Carthage, Tunisia
Université de Monastir, Tunisia
Thales Research & Technology, France
: J Nanomater Mol Nanotechnol

Abstract


Single-walled carbon nanotubes (SWCNT) have excellent electronic, thermal and mechanical properties that make them attractive for potential use in radio-frequency, electronics, and macro-electronic systems and in various types of gas sensing applications. Our device was fabricated with an array of four CNTFETs on the same chip, composed of four different metals (Pd, Pt, Au and Ti) as electrodes. In our previous work we have demonstrate that each CNTFET interacts in a very specific way with a specific gas, identifying a sort of electronics finger printing. In this work, we presents several electrical results regarding SWCNT, we demonstrate that Ids (Vds) curves of the SWCNTs/Pt contact under various Vgs increase with increasing Vgs in dark conditions, but for device with Pd contact the current decrease when we increase gate voltage. In the same context the hysteresis will be important for sample with Pt contact than for devices with Pd electrodes. This effect may be attributed to traps localized in the interface SiO2/CNT. Finally, in the same paper, we present the effect of electrode length for SWCNTs with Pd electrodes.compatibility with flexible substrates of these materials make them as unique candidate for solar cells. Their incorporation in energy storage device such as super-capacitor (physical charge storage device having faster/ higher power density, lower energy density and lower internal resistance) provides balance between the energy storage and source.

Biography


Email: bargaoui.yasmine@hotmail.fr

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