Journal of Nuclear Energy Science & Power Generation TechnologyISSN: 2325-9809

All submissions of the EM system will be redirected to Online Manuscript Submission System. Authors are requested to submit articles directly to Online Manuscript Submission System of respective journal.

The Dependence of Charge Carriers on the Methods of Thermal Processing of Residence Time on Silicon, Legalized with Copper and Iridium

In this work, we investigated the dependence of the concentration of centers of energy levels on the lifetime of charge carriers in silicon samples doped with copper and iridium, and the electrophysical, photoelectric and recombination properties of the sample under the influence of thermal and radiation exposure.

Special Features

Full Text

View

Track Your Manuscript

Media Partners

GET THE APP