Research Article, J Nanomater Mol Nanotechnol S Vol: 0 Issue: 1
Growth of Multilayer Graphene by Chemical Vapor Deposition (CVD) and Characterizations
| D Dutta1, A Hazra2, J Das3, SK Hazra4, VN Lakshmi5, SK Sinha5,A Gianoncelli6, CK Sarkar1 and S Basu1* |
| 1IC Design and Fabrication Centre, Dept. of ETCE, Jadavpur University, Kolkata, India |
| 2Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University (BESU), Howrah, India |
| 3Department of Physics, Jadavpur University, Kolkata, India |
| 4Department of Physics and Materials Science, Jaypee University of Information Technology (JUIT), Waknaghat, Himachal Pradesh, India |
| 5Department of Physics and Department of Electrical Engineering, University of New Haven, West Haven, Connecticut, USA |
| 6Chemistry for Technologies Laboratory, University of Brescia, Brescia, Italy |
| Corresponding author : Dr. S Basu IC Design and Fabrication Centre, Dept. of ETCE, Jadavpur University, Kolkata, India Tel: +91-9830377105; E-mail: sukumarbasu@gmail.com |
| Received: June 06, 2013 Accepted: November 15, 2013 Published: November 19, 2013 |
| Citation: Dutta D, Hazra A, Das J, Hazra SK, Lakshmi VN, Sinha SK (2013) Growth of Multilayer Graphene by Chemical Vapor Deposition (CVD) and Characterizations. J Nanomater Mol Nanotechnol S1:004. doi:10.4172/2324-8777.S1-004 |
Abstract
Growth of Multilayer Graphene by Chemical Vapor Deposition (CVD) and Characterizations
Graphene with the nanostructured configuration has proved to be a potential material for its versatile applications in different areas of science and technology. Growth of single layer graphene is a real challenge but recently few layers and multilayer graphene have also proved to be very useful. In the present investigation, thermal CVD method was employed to grow multilayer graphene thin film by the decomposition of Methane (CH4) mixed with high purity hydrogen in the ratio CH4:H2:N2=15:5:300 (in SCCM) at 1000°C and at atmospheric pressure using copper (Cu) catalytic film deposited on thermally oxidized silicon substrate.
